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Han, C. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Procel Moya, P.A. (author), Tijssen, M. (author), Bento Montes, A.R. (author), Isabella, O. (author), Zeman, M. (author)
Broadband transparent conductive oxide layers with high electron mobility (μ<sub>e</sub>) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In<sub>2</sub>O<sub>3</sub> thin films with high μ<sub>e</sub> (&gt;60 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) have been extensively...
journal article 2019
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Kind, R. (author), Van Swaaij, R.A.C.M.M. (author), Rubinelli, F.A. (author), Solntsev, S. (author), Zeman, M. (author)
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...
journal article 2011