Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping Layers

Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results...

Surface passivation of n -type doped black silicon by atomic-layer-deposited SiO₂/Al₂O₃ stacks

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further...