Will SiOx-pinholes for SiOx/poly-Si passivating contact enhance the passivation quality?

Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collection, beside the tunneling mechanism. However, pinholes are usually...

Hybrid Analytical Model for AC Copper Loss Computation of Hairpin Winding

This article proposes a hybrid analytical model (HAM) for predicting ac copper losses in hairpin windings. The HAM combines the nonlinear semi-analytical model (SAM) and the 1-D ac copper loss computation model to solve the inaccurate boundary solutions of the 1-D ac copper loss computation model when magnetic saturation occurs in the stator...

Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoO_x hole collector layer via tailoring (i)a-Si:H/MoO_x interface

Thin films of transition metal oxides such as molybdenum oxide (MoO_x) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoO_x layers must be mastered to obtain an efficient hole...

Effects of (i)a-Si: H deposition temperature on high-efficiency silicon heterojunction solar cells

Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation...