The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same...

Fabrication of AlN slender piezoelectric cantilevers for highspeed MEMS actuations

Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (002) orientation of the AlN films is obtained. Finally, a simple fabrication process, fully CMOS...

Single-grain Si TFTs for high-speed flexible electronics

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...

Influence of seed layer on crystallinity and orientation of pulsed — DC sputtered AlN thin-films for piezoelectric actuators

Aluminum Nitride thin films with the desired properties for piezoelectric actuators are grown by pulsed DC sputtering on Si (100) substrates coated with different seed layers (Al/1%Si, Mo, Ti). The influence of sputtering parameters and the seed layers on crystallinity and orientation of the AlN films is investigated. Raman spectroscopy...

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...

A 67 dBm OIP3 Multistacked Junction Varactor

Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions

A solid-phase epitaxy (SPE) process that forms ultra-shallow abrupt aluminum p+-doped Si islands has been studied for deposition temperatures from 400 to 500 ºC. The growth process gives a very uniform composition of the p+ layer and an abrupt doping transition to the Si substrate. Low ohmic contacting and near-ideal diode characteristics are...

Material-Inversion Solid-Phase Epitaxy of p+ Si forElevated Junctions