Calderón, M.J. (author), Verduijn, J. (author), Lansbergen, G.P. (author), Tettamanzi, G.C. (author), Rogge, S. (author), Koiller, B. (author) Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the...
journal article 2010