Single Grain Si TFTs for RF and 3D ICs

Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...

An Assessment of ?-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration

SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...