Device operation of P-ion-implanted n-BaSi₂/p-Si heterojunction solar cells

We formed phosphorous(P)-ion-implanted n-BaSi₂ films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi₂/p-Si heterojunction under AM1.5 illumination. The BaSi₂ films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi₂ films using PF<sub...

Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

In this work, we develop SiO_x/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...

Strategies for the implementation of ion implantation doping technique in c-Si wafer-based solar cells

Electricity consumption is increased in last twenty years. It is crucial therefore to find alternative, renewable and sustainable sources to mantain this development. Solar energy has proved to be a valid alternative to produce clean energy. The gigantic development of solar energy technology in the last twenty years has lead to a scenario...

The Transverse Junction Solar Cell