Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...

Suspended Submicron Silicon-Beam for High Sensitivity Piezoresistive Sensing

This paper presents a submicron suspended piezoresistive silicon-beam structure as a basic sensing element to replace the conventional piezoresistors, so to improve the detection sensitivity. The alternative element benefits from the increase of the induced stress, which is locally concentrated on the suspended submicron beam. This approach...

Silicon MEMS for Detection of Liquid and Solid Fronts

High-precision manipulation of small-size objects is an attractive and challenging topic for both industrial production and fundamental scientific research. The capability of monitoring micro-samples during handling is essential to the accuracy and efficiency of a handling system for both liquid and solid samples. When handling liquid samples...