Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields: Investigation of the Harmonic and Inharmonic Potentials

Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the...