Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields: Investigation of the Harmonic and Inharmonic Potentials

Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in nanostructured semiconductors, specifically quantum wells subjected to both harmonic and inharmonic confinement potentials. The primary focus of this inquiry centers on the...

Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials

This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and...