Room temperature photoluminescence (PL) is a powerful technique to study the properties of semiconductors. However, the interpretation of the data can be cumbersome when non-ideal band edge absorption takes place, as is the case in the presence of potential fluctuations. In this
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Room temperature photoluminescence (PL) is a powerful technique to study the properties of semiconductors. However, the interpretation of the data can be cumbersome when non-ideal band edge absorption takes place, as is the case in the presence of potential fluctuations. In this study, PL measurements are modeled to quantify potential fluctuations in Cu (In, Ga) Se2 (CIGS) absorber layers for photovoltaic applications. Previous models have attributed these variations to either bandgap fluctuations (BGFs) or electrostatic fluctuations (EFs). In reality, these two phenomena happen simultaneously and, therefore, affect the PL together. For this, the unified potential fluctuation (UPF) model is introduced. This model incorporates the effect of both types of fluctuations on the absorptance of the material and subsequently the PL spectra. The UPF model is successfully used to fit both single- and three-stage co-evaporated ultrathin (around 500 nm) CIGS samples, showing a clear improvement with respect to the previous BGF and EF models. Some PL measurements show possible interference distortions for which an interference function is used to simultaneously correct the PL spectra of a sample measured with several laser excitation intensities. All the models used in this work are bundled into a user-friendly, open-source Python program. @en
