Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.@en

Cathodoluminescence spectroscopy is a key analysis technique in nanophotonics research and technology, yet many aspects of its fundamental excitation mechanisms are not well understood on the single-electron and single-photon level. Here, we determine the cathodoluminescence emission statistics of InGaN quantum wells embedded in GaN under 6-30-keV electron excitation and find that the light emission rate varies strongly from electron to electron. Strong photon bunching is observed for the InGaN quantum well emission at 2.77 eV due to the generation of multiple quantum well excitations by a single primary electron. The bunching effect, measured by the g(2)(t) autocorrelation function, decreases with increasing beam current in the range 3-350 pA. Under pulsed excitation (p=2-100ns; 0.13-6 electrons per pulse), the bunching effect strongly increases. A model based on Monte Carlo simulations is developed that assumes a fraction γ of the primary electrons generates electron-hole pairs that create multiple photons in the quantum wells. At a fixed primary electron energy (10 keV) the model explains all g(2) measurements for different beam currents and pulse durations using a single value for γ=0.5. At lower energies, when electrons cause mostly near-surface excitations, γ is reduced (γ=0.01 at 6 keV), which is explained by the presence of a AlGaN barrier layer that inhibits carrier diffusion to the buried quantum wells. The combination of g(2) measurements in pulsed and continuous mode with spectral analysis provides a powerful tool to study optoelectronic properties and may find application in many other optically active systems and devices.@en