Humidity sensors based on flexible sensitive nanomaterials are very attractive in noncontact healthcare monitoring. However, the existing humidity sensors have some shortcomings such as limited sensitivity, narrow relative humidity (RH) range, and a complex process. Herein, we show that a tin sulphide (SnS) nanoflakes-based sensor presents high humidity sensing behaviour both in rigid and flexible substrate. The sensing mechanism based on the Schottky nature of a SnS-metal contact endows the as-fabricated sensor with a high response of 2491000% towards a wide RH range from 3% RH to 99% RH. The response and recovery time of the sensor are 6 s and 4 s, respectively. Besides, the flexible SnS nanoflakes-based humidity sensor with a polyimide substrate can be well attached to the skin and exhibits stable humidity sensing performance in the natural flat state and under bending loading. Moreover, the first-principles analysis is performed to prove the high specificity of SnS to the moisture (H₂O) in the air. Benefiting from its promising advantages, we explore some application of the SnS nanoflakes-based sensors in detection of breathing patterns and non-contact finger tips sensing behaviour. The sensor can monitor the respiration pattern of a human being accurately, and recognize the movement of the fingertip speedily. This novel humidity sensor shows great promising application in physiological and physical monitoring, portable diagnosis system, and noncontact interface localization.

In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS₂) with a sputtered indium-gallium-zinc-oxide (IGZO) film. To the best of our knowledge, the present device has the best NO₂ gas sensor response compared to all the gas sensors based on transition-metal dichalcogenide materials. The gas-sensing response is investigated under different NO₂ concentrations, adopting heterojunction device mode and transistor mode. High sensing response is obtained of p-N diode in the range of 1-300 ppm with values of 230% for 5 ppm and 18 170% for 300 ppm. On the transistor mode, the gas-sensing response can be modulated by the gate bias, and the transistor shows an ultrahigh response after exposure to NO₂, with sensitivity values of 6820% for 5 ppm and 499 400% for 300 ppm. Interestingly, the transistor has a typical ambipolar behavior under dry air, while the transistor becomes p-type as the amount of NO₂ increases. The assembly of these results demonstrates that the WS₂/IGZO device is a promising platform for the NO₂-gas detection, and its gas-modulated transistor properties show a potential application in tunable engineering for two-dimensional material heterojunction-based transistor device.

In this study, the structural, electronic and optical properties of a tungsten disulfide (WS₂) hybrid with indium-gallium-zinc-oxide (IGZO) heterostructures were investigated based on density functional theory (DFT) calculations. According to the results of binding energy, charge density difference and electron localization function of heterostructures, we found that the WS₂ and IGZO monolayers were bound to each other via non-covalent interactions with large binding energy. The calculated results illustrate that the AAii stacking pattern has an indirect band gap of 1.643 eV, while AAi and AB stacking patterns have maximum direct-gaps of 1.102 eV and 1.234 eV, respectively. Under an external E-field and mechanical strain, the response of the energy gap of the WS₂/IGZO heterostructure monotonically decreased over a wide range, even with a semiconductor-metal transition. In addition, we investigated the optical properties of the heterostructure and found that it exhibits a much broad spectral responsivity (from visible light to deep UV light) and a more pronounced optical absorption than WS₂ and IGZO monolayers. Moreover, the tensile strain could weaken the photoresponse of the heterostructure to the UV light and enhance the response for the visible light; under compressive strain, the heterostructure showed a strong absorption peak in the UV light. Meanwhile, a red-shift was observed under an external strain. All these unique and tunable properties indicate that the WS₂/IGZO heterostructure is a good candidate for nanoelectronic and photoelectronic devices, such as field-effect transistors, flexible sensors, photodetectors and photonic devices.