We studied the etching of small crystals of the high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) with various dilute compositions of hydrochloric and nitric acids. A particular mixture of those acids was chosen to simultaneously fabricate multiple rectangular stand-alone Bi2212 mesa structures from a large, doubly-cleaved and doubly metallic-coated single crystal. The radiation characteristics of these devices were found to be very similar to stand-alone devices fabricated previously using dry-etching techniques. The greatly reduced time and cost of fabrication of stand-alone Bi2212 devices using our wet-etching technique should facilitate the mass production of a large number of identical stand-alone devices from a large single-crystalline Bi2212 substrate.@en

Using our recent design of thermally managed sandwich device structures, we studied the radiation frequency characteristics of three such devices of the same rectangular dimensions made from the same single crystal of the high-Tc superconductor Bi2Sr2CaCu2O8+ δ, and all three devices exhibit similar characteristics. Their observed radiation intensities appear to be enhanced at many transverse magnetic TMn,m cavity mode frequencies, possibly including some higher TM0,m modes with waves solely along the rectangular length, none of which have previously been reported. In addition, the temperature dependences of the radiation frequencies correspond strongly to the temperature dependences of the maximum bias voltages applied to the devices. The excitations of many cavity modes higher in frequency than that of the usually observed TM1,0 mode and the high reproducibility of the radiation frequency characteristics both appear to originate from the reduction in the Joule self-heating of the thermally managed sandwich structures. The information provided here should aid in the design of future devices to obtain the desired emission frequency ranges.@en

Joule heating is the central issue in order to develop high-power and high-performance terahertz (THz) emission from mesa devices employing the intrinsic Josephson junctions in a layered high transition-temperature Tc superconductor. Here, we describe a convenient local thermal measurement technique using charge-coupled-device-based thermoreflectance microscopy, with the highest spatial resolution to date. This technique clearly proves that the relative temperature changes of the mesa devices between different bias points on the current-voltage characteristics can be measured very sensitively. In addition, the heating characteristics on the surface of the mesa devices can be detected more directly without any special treatment of the mesa surface such as previous coatings with SiC micro-powders. The results shown here clearly indicate that the contact resistance strongly affects the formation of an inhomogeneous temperature distribution on the mesa structures. Since the temperature and sample dependencies of the Joule heating characteristics can be measured quickly, this simple thermal evaluation technique is a useful tool to check the quality of the electrical contacts, electrical wiring, and sample defects. Thus, this technique could help to reduce the heating problems and to improve the performance of superconducting THz emitter devices.@en