The radiation intensity from the intrinsic Josephson junction high-T_c superconductor Bi₂Sr₂CaCu₂O_8+δ terahertz emitters (Bi2212-THz emitters) is one of the most important characteristics for application uses of the device. In principle, it would be expected to be improved with increasing the number of intrinsic Josephson junctions N in the emitters. In order to further improve the device characteristics, we have developed a stand alone type of mesa structures (SAMs) of Bi2212 crystals. Here, we understood the radiation characteristics of our SAMs more deeply, after we studied the radiation characteristics from three SAMs (S1, S2, and S3) with different thicknesses. Compar-ing radiation characteristics of the SAMs in which the number of intrinsic Josephson junctions are N ∼ 1300 (S1), 2300 (S2), and 3100 (S3), respectively, the radiation intensity, frequency as well as the characteristics of the device working bath temperature are well understood. The strongest radiation of the order of few tens of microwatt was observed from the thickest SAM of S3. We discussed this feature through the N²-relationship and the radiation efficiency of a patch antenna. The thinner SAM of S1 can generate higher radiation frequencies than the thicker one of S3 due to the difference of the applied voltage per junctions limited by the heat-removal performance of the device structures. The observed features in this study are worthwhile designing Bi2212-THz emitters with better emission characteristics for many applications.

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Since the discovery of continuous, coherent THz radiation from intrinsic Josephson junctions (IJJs) constructed in the single crystals of Bi₂Sr₂CaCu₂O_8+δ in 2007, various types of device structures have been developed. Thermal management of Joule heat in the IJJ mesa structure is the most important issue to improve the radiation characteristics of the IJJ-THz emitters. The radiation frequencies ranging from 0.3 to 2.4 THz, the emission power of $ \sim 30$ pW/mesa and the radiation linewidth of 0.2 GHz at $ \sim 0.5$ THz were obtained from the thermal managed device structures so far. We show a brief overview of the IJJ-THz emitters in our group.

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We studied the etching of small crystals of the high-T_c superconductor Bi₂Sr₂CaCu₂O_8+δ (Bi2212) with various dilute compositions of hydrochloric and nitric acids. A particular mixture of those acids was chosen to simultaneously fabricate multiple rectangular stand-alone Bi2212 mesa structures from a large, doubly-cleaved and doubly metallic-coated single crystal. The radiation characteristics of these devices were found to be very similar to stand-alone devices fabricated previously using dry-etching techniques. The greatly reduced time and cost of fabrication of stand-alone Bi2212 devices using our wet-etching technique should facilitate the mass production of a large number of identical stand-alone devices from a large single-crystalline Bi2212 substrate.

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Many practical applications of high T_c superconductors involve layered materials and magnetic fields applied on an arbitrary direction with respect to the layers. When the anisotropy is very large, Cooper pair currents can circulate either within or perpendicular to the layers. Thus, tilted magnetic fields lead to intertwined lattices of Josephson and Abrikosov vortices, with quantized circulation across and within layers, respectively. Transport in such intertwined lattices has been studied in detail, but direct observation and manipulation of vortices remains challenging. Here we present magnetic force microscopy experiments in tilted magnetic fields in the extremely quasi-two dimensional superconductor Bi₂Sr₂CaCu₂O₈. We trigger Abrikosov vortex motion in between Josephson vortices, and find that Josephson vortices in different layers can be brought on top of each other. Our measurements suggest that intertwined lattices in tilted magnetic fields can be intrinsically easy to manipulate thanks to the mutual interaction between Abrikosov and Josephson vortices.

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We discuss the cavity modes and radiation pattern in solid state terahertz (THz) sources based on layered high-temperature superconducting Bi ₂ Sr ₂ CaCu ₂ O _8+δ (Bi-2212). We experimentally measure the emission spectra using the Fourier transform infrared spectrometer in order to elucidate the radiation mechanism of the mesa samples. Moreover, we experimentally study the angular dependence of the emission intensity obtained in one mesa's plane at the frequency f = 0.61 THz, at various detection angles θ by rotating the sample holder relative to the detector, to identify the excited EM cavity modes within the mesa that participate in the device output power enhancement. We modelled the mesa cavity and find a relatively good agreement between the experiment and theory. Our results show that compact, coherent and continuous-wave Bi-2212 THz devices are one of the most promising THz sources, capable of bridging the microwaves to photonics gap.

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Using our recent design of thermally managed sandwich device structures, we studied the radiation frequency characteristics of three such devices of the same rectangular dimensions made from the same single crystal of the high-Tc superconductor Bi2Sr2CaCu2O8+ δ, and all three devices exhibit similar characteristics. Their observed radiation intensities appear to be enhanced at many transverse magnetic TMn,m cavity mode frequencies, possibly including some higher TM0,m modes with waves solely along the rectangular length, none of which have previously been reported. In addition, the temperature dependences of the radiation frequencies correspond strongly to the temperature dependences of the maximum bias voltages applied to the devices. The excitations of many cavity modes higher in frequency than that of the usually observed TM1,0 mode and the high reproducibility of the radiation frequency characteristics both appear to originate from the reduction in the Joule self-heating of the thermally managed sandwich structures. The information provided here should aid in the design of future devices to obtain the desired emission frequency ranges.@en