Silicon carbide (SiC) and silicon oxide (SiOx) have garnered increased attention to reduce the parasitic absorption at the p layer when compared to p-aSi.An outstanding question is how the integration of p-SiC and p-SiOx impacts the metastability of the solr cells. Previous work in the PVMD group at TU Delft has studied the stability of the p-nc-SiOx in detail revealing from experimental results that stable efficiency remains elusive.
This thesis investigates the impact of p-a-SiC on the light-induced degradation (LID) of p-i-n solar cells, aiming to compare its degradation performance with that of p-nc-SiOx. Prior to comparison, p-a-SiC fabrication via plasma-enhanced chemical vapor deposition (PECVD) is extensively explored, as it serves as a widely used light absorber in thin-film silicon solar cells. Various parameters such as power pressure and gas flow rate of the source gas for silicon carbide formation are meticulously studied to achieve optimal P-a-SiC performance. Once the optimal fabrication conditions are identified, light absorption experiments are conducted and characterized using JV and EQE measurements to assess LID performance.