C
Changhui
2 records found
1
Authored
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High ope
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This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios Wg/Lg from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at ...