TK
T. J. Knapp
2 records found
1
Erratum
The critical role of substrate disorder in valley splitting in Si quantum wells (Applied Physics Letters (2018) 112 (243107) DOI: 10.1063/1.5033447)
In the original published article,1 a typographical error was discovered in the horizontal axis labels of Fig. 3(a), right panel: instead of 4, 5, and 6, these axis labels should be 4, 6, and 8. We have adjusted Fig. 3 here to correct this error. This error was confined to the ma
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Atomic-scale disorder at the top interface of a Si quantum well is known to suppress valley splitting. Such disorder may be inherited from the underlying substrate and relaxed buffer growth, but can also arise at the top quantum well interface due to the random SiGe alloy. Here,
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