ME
M. A. Eriksson
6 records found
1
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad
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We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross sec
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Erratum
The critical role of substrate disorder in valley splitting in Si quantum wells (Applied Physics Letters (2018) 112 (243107) DOI: 10.1063/1.5033447)
In the original published article,1 a typographical error was discovered in the horizontal axis labels of Fig. 3(a), right panel: instead of 4, 5, and 6, these axis labels should be 4, 6, and 8. We have adjusted Fig. 3 here to correct this error. This error was confined to the ma
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We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduc
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Atomic-scale disorder at the top interface of a Si quantum well is known to suppress valley splitting. Such disorder may be inherited from the underlying substrate and relaxed buffer growth, but can also arise at the top quantum well interface due to the random SiGe alloy. Here,
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Dressed photon-orbital states in a quantum dot
Intervalley spin resonance
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley
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