Transport experiments in twisted bilayer graphene have revealed multiple superconducting domes separated by correlated insulating states^1–5. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as was predicted by band structure calculations^6–8. Evidence for the existence of a flat band comes from local tunnelling spectroscopy^9–13 and electronic compressibility measurements¹⁴, which report two or more sharp peaks in the density of states that may be associated with closely spaced Van Hove singularities. However, direct momentum-resolved measurements have proved to be challenging¹⁵. Here, we combine different imaging techniques and angle-resolved photoemission with simultaneous real- and momentum-space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with a homogeneous twist angle that support a flat band with a spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands, which show multiple moiré hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure.

A reduction of the interprobe distance in multiprobe and double-tip scanning tunneling microscopy to the nanometer scale has been a longstanding and technically difficult challenge. Recent multiprobe systems have allowed for significant progress by achieving distances of ~30 nm using two individually driven, traditional metal wire tips. For situations where simple alignment and fixed separation can be advantageous, we present the fabrication of on-chip double-tip devices that incorporate two mechanically fixed gold tips with a tip separation of only 35 nm. We utilize the excellent mechanical, insulating and dielectric properties of high-quality SiN as a base material to realize easy-to-implement, lithographically defined and mechanically stable tips. With their large contact pads and adjustable footprint, these novel tips can be easily integrated with most existing commercial combined STM/AFM systems.

A double-tip scanning tunneling microscope with nanometer-scale tip separation has the ability to access the single-electron Green's function in real and momentum spaces based on second-order tunneling processes. Experimental realization of such measurements has been limited to quasi-one-dimensional systems due to the extremely small signal size. Here we propose an alternative approach to obtain such information by exploiting the current-current correlations from the individual tips and present a theoretical formalism to describe it. To assess the feasibility of our approach we make a numerical estimate for an ∼25-nm Pb nanoisland and show that the wave function in fact extends from tip to tip and the signal depends less strongly on increased tip separation in the diffusive regime than the one in alternative approaches relying on tip-to-tip conductance.

We report on the fabrication and performance of a new kind of tip for scanning tunneling microscopy. By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Contrary to conventional etched metal wire tips, these can be integrated into lithographically defined electrical circuits. We describe a new fabrication method to create a defined apex on a silicon chip and experimentally demonstrate the high performance of the smart tips, both in stability and resolution. In situ tip preparation methods are possible and we verify that they can resolve the herringbone reconstruction and Friedel oscillations on Au(111) surfaces. We further present an overview of possible applications.

We have imaged the current noise with atomic resolution in a Josephson scanning tunneling microscope with a Pb-Pb junction. By measuring the current noise as a function of applied bias, we reveal the change from single-electron tunneling above the superconducting gap energy to double-electron charge transfer below the gap energy when Andreev processes become dominant. Our spatially resolved noise maps show that this doubling occurs homogeneously on the surface, and also on impurity locations, demonstrating that indeed the charge pairing is not influenced by disruptions in the superconductor smaller than the superconducting coherence length.