Tailoring the electromechanical properties of a material without altering the original composition is an emerging phenomenon for the optimization of functional properties. Post-sintering annealing with varying maximum temperatures, cooling rates, and atmospheres can influence the crystallographic phases, domain structures, conductivity, mechanical properties, and the temperature stability of the electromechanical properties. K1/2Bi1/2TiO3 (KBT) is a high-temperature stable >280 °C A-site complex perovskite piezoelectric and is critical for high-temperature applications. However, the influence of annealing conditions on crystal structure, domain structure, and functional properties is not well-known. This work demonstrates the effect of annealing cooling rate and maximum temperature on the macroscopic electromechanical response as well as the crystal and domain structure. It is shown that the room-temperature state of KBT can be reversibly switched between the ferroelectric and relaxor state, where the slow cooling from 900 °C favors the stabilization of the relaxor state and quenching induces the ferroelectric state. Importantly, the quenched sample showed a stable piezoelectric coefficient up to 368 °C in the depolarization temperature, an increase of 78 °C. The origin of ferroelectric-relaxor state change is proposed to be related to the A-site cation redistribution and the associated change in the crystal structure and domain structure.@en

The formation of associated defects (e.g.[Al Ti-V O]˙) upon acceptor doping is commonly seen as a reason for trapping of mobile vacancies in perovskite ionic conductors and electromechanical hardening in piezoelectric perovskites. In order to clarify the presence of associated defects in Al-doped (Na 1/2,Bi 1/2)TiO 3(NBT-Al) and Al-substituted ((Na,K) 1/2Bi 1/2)TiO 3-BiAlO 3(NKBT-BA), we employ a combination of impedance spectroscopy, 27Al NMR spectroscopy, and electronic structure calculations. Our results indicate that associated defects between and oxygen vacancies can only be found in case of low acceptor doping concentrations. This suggests a decreased driving force for defect association at high doping concentrations as the reason for the non-linear dependence between acceptor concentration and oxygen ionic conductivity for NBT-based ceramics. Furthermore, the combination of experimental and theoretical techniques provides clear evidence for the successive occupation of the B-site, the A-site, and finally the formation of a secondary phase with increasing Al 3+content. Altogether, these results call for a new evaluation of the interaction between aliovalent dopants and O 2−vacancies in acceptor-doped functional oxides, with implications for the design of ionic conductors as well as ferroelectric materials. @en