MA
Maguy Abi Abi Jaoude
7 records found
1
In this paper, we investigate the switching behavior of nano-thick microscale Pd/Hf/HfO2-10 nm/Pd memristors. Several key electrical characteristics such as the forming voltage and the SET/RESET I[sbnd]V parameters are studied as a function of the device size, the hafn
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This paper describes the synthesis of micro-Thick hafnium-oxide (60 μm) memristors using a low-cost sol-gel drop-coating technique, and emphasizes on key parameters to be considered in the development of the microscale technology. The impact of electrode material on the device I-
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This paper presents a physics-based model for memristors with different active layer materials. The model predicts the effect of changing the active material on the electrical characteristics of the devices. It captures the essential characteristics of the memristor such as coupl
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Bioinspired semiconductor-based devices with adaptive and dynamic properties will have many advantages over conventional static digital silicon-based technologies. The ability to compute, process, and retain information in parallel, without referencing other circuit elements, off
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A rewritable micro-Thick low power memristor device is presented. The memristor is fabricated based on a novel structure that is composed of Al/TiO2/Cu. The device switches at 3X lower voltage compared to the existing bipolar memristor state of the art at the microscale. The fabr
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Sol-gel/drop-coated micro-thick TiO2 memristors were investigated and developed for low-power radiation sensing. Devices constructed with coated aluminum (Al) electrodes exhibited unipolar I-V characteristics with dynamic turn-on voltage, and progressive ROFF
This paper proposes novel secret key generation techniques using memristor devices. The approach depends on using the initial profile of a memristor as a master key. In addition, session keys are generated using the master key and other specified parameters. In contrast to existi
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