Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm ² V ⁻¹ s ⁻¹ and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

Frequency analysis of the rf emission of oscillating Josephson supercurrent is a powerful passive way of probing properties of topological Josephson junctions. In particular, measurements of the Josephson emission enable the detection of topological gapless Andreev bound states that give rise to emission at half the Josephson frequency f_j rather than conventional emission at f_j. Here, we report direct measurement of rf emission spectra on Josephson junctions made of HgTe-based gate-tunable topological weak links. The emission spectra exhibit a clear signal at half the Josephson frequency f_j=2. The linewidths of emission lines indicate a coherence time of 0.3-4 ns for the f_j=2 line, much shorter than for the f_j line (3-4 ns). These observations strongly point towards the presence of topological gapless Andreev bound states and pave the way for a future HgTe-based platform for topological quantum computation.