This work presents a dual-tone source on thin film lithium niobate for generating a tunable carrier frequency at the terahertz domain. The system exhibits stable carrier generation above 100 GHz with sub-kHz linewidth and tunability of over 5 GHz.

Terahertz technologies offer unique advantages for communication, sensing, and imaging, yet integrated platforms struggle to perform efficiently in this range. Thin-film lithium niobate, a nonlinear photonic platform, enables compact, broadband, and high-speed terahertz sources through efficient frequency conversion. In this talk, I present our progress on developing subterahertz continuous-wave sources on lithium niobate chips, aiming to bridge the gap between electronic and photonic systems for next-generation terahertz integration.

We present a photonic integration method combining flip-chip bonding and photonic wirebonding. This approach enables a 'mother' substrate to host 'child' chips from diverse platforms, fostering seamless integration for multi-functional photonic architectures.