The elemental composition and electronic structure of materials analyzed by electron energy loss spectroscopy (EELS) are probed by the inner-shell ionization of atoms. This is a localized process that can be approximated by the scattering of an electron beam from a free atom. We calculate the inelastic differential cross section perturbatively within the framework of quantum electrodynamics (QED). The interaction between the incoming electron and the atom factorizes into a high-energy electron term and the atomic transition current. The matrix elements of the transition current are computed within the relaxed Dirac-Hartree-Fock method. We analyze the correlation effects arising from the relaxation of the atomic orbitals induced by the creation of a core hole. These effects are particularly relevant in quantum many-body systems and have a significant impact on the shape of the differential cross section near the ionization threshold in EELS spectra. In addition to the continuum, we calculate the discrete excitation spectrum of DyScO3 using crystal-field multiplet theory. The calculated spectrum shows very good agreement with experimental EELS data.

Electron beam energies in Transmission Electron Microscopes (TEMs) reach the relativistic realm constituting Quantum Electrodynamics (QED) the appropriate framework for the study of electron matter interaction in TEMs. We focus on the inelastic scattering of relativistic electrons from a generic oriented target. The inelastic differential cross section factorizes to the fast electron part which is calculated analytically, and the dynamic form factor of the target, which encodes the response of the medium to the interaction with the beam. The properties of the dynamic form factor of oriented targets are analyzed. We then derive the scattering cross section of electrons by magnetic targets where spin-flip transitions are induced. We comment on the kinematic regimes where the coefficient of the transverse magnetic interaction is amplified compared to the coulomb matrix element.

Structured illumination microscopy (SIM) is a powerful method for high-resolution 3D-imaging that is compatible with standard fluorescence labeling techniques, as it provides optical sectioning as well as an up to twofold improvement of lateral resolution over widefield microscopy by combining illumination pattern diversity with computational reconstruction. We present a quantitative analysis of the image quality of 3D-SIM using the spectral signal-to-noise ratio (SSNR). In particular, we compare conventional woodpile illumination pattern based 3D-SIM, where the pattern is rotated and translated to acquire the set of raw images that is fed into the reconstruction algorithm, to (square or hexagonal) lattice 3D-SIM, where the pattern is only translated to assemble the input set of raw images. It appears that conventional 3D-SIM has better SSNR than the considered cases of lattice 3D-SIM. In addition, we have also analyzed the impact of the relative amplitude, angle of incidence and polarization of the set of illumination plane waves on image quality, and show how two SSNR derived metrics, SSNR volume and SSNR entropy, can be used to optimize these illumination pattern parameters.