We present a time-dependent numerical model for corrosion in microelectronics, focusing on aluminum bondpads, which can be very beneficial for the design as well as the interpretation of reliability data of microelectronics. The model includes charge transport through the polymer microelectronics encapsulant as well as the formation of layers of space charge at all polymer interfaces, which strongly influences the electrochemical charge transfer rate at the polymer¿metal interfaces via the generalized Frumkin¿Butler¿Volmer equation. The system we consider consists of two parallel gold bondwires that are each electrically connected to two aluminum bondpads, which are assumed to contain weak spots in the protective native oxide layer, i.e. pits. This system is encapsulated in an epoxy molding compound, which is the usual low-conductive, and slightly hydrophilic, microelectronic encapsulant. We assume that a cathodic reaction takes place at the gold wires, and an anodic reaction at the weak spots of the aluminum bondpads. Furthermore,weassume the presence of a large excess of inert supporting salt compared to the reactive hydroxyl ions. Numerical calculations were made in a two-dimensional geometry as function of the applied voltage difference between the two wires, the concentration of absorbed moisture in the encapsulation, and the ambient temperature. We show that the model results predict trends similar to the empirical industrial standards for failure of microelectronic products due to corrosion.@en

The supply current of plastic encapsulated microelectronic devices in the presence of a high potential source can increase abnormally due to parasitic gate leakage. According to reliability qualification standards, stress during a parasitic gate leakage test is applied by a corona discharge at a thin tungsten needle placed a few centimeters above the devices under test. The gate leakage sensitivity factor obtained from this test lacks any physical basis and is therefore not believed to be useful. Here we show that this sensitivity factor can be replaced by a physical model for charge transport through the encapsulation material. The model is used to explain why devices encapsulated by a molding compound with a low volume resistivity of 6x10(11) Ohm.cm, at high temperature, 150º C, are more prone to fail the test on an increased current, compared to devices encapsulated by a compound having a high resistivity of 4x10(13) Ohm.cm at the same temperature. Furthermore, we discuss an alternative test setup where the potential difference between two parallel electrodes sandwiching the devices is used as the source of stress. It is suggested in literature that this setup yields identical results as the current setup. However, using both setups on the same product did not result in an equal outcome, which indicates that both tests do not trigger the same failure mechanism to the same extent.@en

Plastic encapsulations will absorb moisture in humid environments due to their hydrophilic nature, this in combination with the inherent ionic contamination of the plastic will result in an electrolyte. This electrolyte might pose several reliability issues for the package and the encapsulated microelectronic circuit, such as electrochemical migration and bond pad corrosion. The corresponding failure mechanisms are associated with ionic currents through the package and electrochemical processes at e.g. the leads or bond wires. In this paper we present a generic mathematical framework for modeling ionic currents and electrochemical processes. We will apply this framework to electrochemical migration of metal between the leads of a plastic encapsulation, and show results for the transient formation of migration fluxes through the plastic encapsulation.@en

We present a numerical method to describe the transport of ions through polymeric electrolytes under the influence of an applied electrostatic field. The transport of ions results in an ion concentration profile with a large gradient near charged interfaces, the so-called diffuse layer. We show that the Poisson-Nernst-Planck theory, which generally describes the transport of ions, can be simplified significantly if the dimensions of the bulk material are much larger than the thickness of the diffuse layer. In this case, charge transport through the bulk of the material is driven by the electric field only (Ohm's law). At all interfaces an analytical mathematical relation between the surface charge and the voltage difference over the diffuse layer can be used. Several of these relations are used, including relations that account for ion volume effects. We use experimental data from literature [J.A. van der Pol, R.T.H. Rongen, H.J. Bruggers, Microelectron.Reliab.40 (2000) 1267] of charge accumulation at the surface of an integrated circuit (IC) resulting from the transport of ions through the polymeric material encapsulating the device. The data are very well described by a two-dimensional finite element model based on the simplified Poisson-Nernst-Planck theory. In addition, the theory predicts that the accumulated charge at the circuit interface will slowly drain away after having reached the experimentally observed maximum.@en

Despite extensive research over the past decades, corrosion of aluminum bond pads is still a major reliability risk for plastic encapsulated microelectronics. Nowadays even an increase in susceptibility for corrosion is observed for new waferfab technologies and encapsulation materials during reliability tests. The recent trend for the new generation encapsulation materials is to decrease the glass transition temperature. As a result reliability tests could be performed at temperatures well above this temperature, such that traditionally used translations between test and operational lifetime, i.e. the acceleration factor, are no longer valid. Consequently, a new acceleration model for bond pad corrosion is required, which is capable of predicting the lifetime of products from test performed at temperatures above glass transition temperature. In this work we will show the merits of electrochemical cell modeling on the understanding of corrosion failures in microelectronics. The model is based on the Poisson-Nernst-Planck equation for the transport of ions coupled to a generalized Frumkin corrected Butler-Volmer equation for the kinetics of the electrochemical reactions. We present results as an example to clarify our approach.@en