van der Waals heterostructures (vdWHs) composed of transition-metal dichalcogenides (TMDs) and layered magnetic semiconductors offer great opportunities to manipulate the exciton and valley properties of TMDs. Here, we present magneto-photoluminescence (PL) studies in a WSe₂monolayer (ML) on a CrSBr crystal, an anisotropic layered antiferromagnetic semiconductor. Our results reveal the unique behavior of each of the ML-WSe₂PL peaks under a magnetic field that is distinct from the pristine case. An intriguing feature is the clear enhancement of the PL intensity that we observe each time the external magnetic field tunes the energy of an exciton in CrSBr into resonance with one of the optical states of WSe₂. This result suggests a magnetic field-controlled resonant energy transfer (RET) beyond other effects reported in similar structures. Our work provides deep insight into the importance of different mechanisms in magnetic vdWHs and underscores its great potential for light harvesting and emission enhancement of two-dimensional materials.

van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe₂ on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe₂, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe₂/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.