DD
D. Draxelmayr
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1
This paper presents an integrated shunt-based current-sensing system (CSS) capable of handling ±36-A currents, the highest ever reported. It also achieves a 0.3% gain error and a 400-μA offset, which is significantly better than the state-of-the-art systems. The heart of the system is a robust 260-μ Ω shunt resistor made from the lead frame of a standard HVQFN plastic package. The resulting voltage drop is then digitized by a precision Δ Σ ADC and a bandgap reference (BGR). At the expense of current handling capability, a ±5-A version of the CSS uses a 10-mΩ on-chip metal shunt to achieve just a 4-μ A offset. Both designs are realized in a standard 0.13-μm CMOS process and draw 13 μA from a 1.5-V supply. Compensation of the spread and nonlinear temperature dependency of the shunt resistor Rshunt is accomplished by the use of a fixed polynomial master curve and a single room temperature calibration. This procedure also effectively compensates for the residual spread and nonlinearity of the ADC and the BGR.
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This paper presents an integrated shunt-based current-sensing system (CSS) capable of handling ±36-A currents, the highest ever reported. It also achieves a 0.3% gain error and a 400-μA offset, which is significantly better than the state-of-the-art systems. The heart of the system is a robust 260-μ Ω shunt resistor made from the lead frame of a standard HVQFN plastic package. The resulting voltage drop is then digitized by a precision Δ Σ ADC and a bandgap reference (BGR). At the expense of current handling capability, a ±5-A version of the CSS uses a 10-mΩ on-chip metal shunt to achieve just a 4-μ A offset. Both designs are realized in a standard 0.13-μm CMOS process and draw 13 μA from a 1.5-V supply. Compensation of the spread and nonlinear temperature dependency of the shunt resistor Rshunt is accomplished by the use of a fixed polynomial master curve and a single room temperature calibration. This procedure also effectively compensates for the residual spread and nonlinearity of the ADC and the BGR.
This paper presents an integrated shunt-based current-sensing system (CSS) capable of handling ±36A currents, the highest ever reported. It also achieves 0.3% gain error and 400μA offset, which is significantly better than the state-of-the-art. The heart of the system is a robust 260μΩ shunt made from the lead-frame of a standard HVQFN plastic package. The resulting voltage drop is then digitized by a ΔΣ ADC and a bandgap reference (BGR). At the expense of current handling capability, a ±5A version of the CSS uses a 10mΩ on-chip metal shunt to achieve just 4μA offset. Both designs were realized in a standard 0.13μm CMOS process.
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This paper presents an integrated shunt-based current-sensing system (CSS) capable of handling ±36A currents, the highest ever reported. It also achieves 0.3% gain error and 400μA offset, which is significantly better than the state-of-the-art. The heart of the system is a robust 260μΩ shunt made from the lead-frame of a standard HVQFN plastic package. The resulting voltage drop is then digitized by a ΔΣ ADC and a bandgap reference (BGR). At the expense of current handling capability, a ±5A version of the CSS uses a 10mΩ on-chip metal shunt to achieve just 4μA offset. Both designs were realized in a standard 0.13μm CMOS process.
This paper presents an integrated current-sensing system (CSS) that is intended for the use in battery-powered devices. It consists of a 10 mΩ on-chip metal shunt resistor, a switched-capacitor (SC) ΔΣ ADC, and a dynamic bandgap reference (BGR) that provides the ADC's reference voltage and also senses the shunt's temperature. The CSS is realized in a standard 0.13 μm CMOS process, occupies 1.15 mm2 and draws 55 μA from a 1.5 V supply. Extensive measurements were made on 24 devices, 12 of which were directly bonded to a printed-circuit board (PCB) and 12 of which were packaged in a standard HVQFN plastic package. For currents ranging from -5 to +5 A and over a temperature range of -55 °C to + 85 °C, they exhibit a maximum offset of 16μA and a maximum gain error of ±0.3%. This level of accuracy represents a significant improvement on the state of the art, and was achieved by the use of an accurate shunt temperature compensation scheme, a low-leakage sampling scheme, and several dynamic error correction techniques.
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This paper presents an integrated current-sensing system (CSS) that is intended for the use in battery-powered devices. It consists of a 10 mΩ on-chip metal shunt resistor, a switched-capacitor (SC) ΔΣ ADC, and a dynamic bandgap reference (BGR) that provides the ADC's reference voltage and also senses the shunt's temperature. The CSS is realized in a standard 0.13 μm CMOS process, occupies 1.15 mm2 and draws 55 μA from a 1.5 V supply. Extensive measurements were made on 24 devices, 12 of which were directly bonded to a printed-circuit board (PCB) and 12 of which were packaged in a standard HVQFN plastic package. For currents ranging from -5 to +5 A and over a temperature range of -55 °C to + 85 °C, they exhibit a maximum offset of 16μA and a maximum gain error of ±0.3%. This level of accuracy represents a significant improvement on the state of the art, and was achieved by the use of an accurate shunt temperature compensation scheme, a low-leakage sampling scheme, and several dynamic error correction techniques.