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M. Chan

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2 records found

Journal article (2024) - Christian G. Prosko, Ivan Kulesh, Michael Chan, Lin Han, Di Xiao, Candice Thomas, Michael J. Manfra, Srijit Goswami, Filip K. Malinowski
Quantum interference of electron tunneling occurs in any system where multiple tunneling paths connect states. This unavoidably arises in two-dimensional semiconducting qubit arrays, and must be controlled as a prerequisite for the manipulation and readout of hybrid topological and parity qubits. Studying a loop formed by two quantum dots, we demonstrate a magnetic-flux-tunable hybridization between two electronic levels, an irreducibly simple system where quantum interference is expected to occur. Using radio-frequency reflectometry of the dots’ gate electrodes we extract an interdot coupling exhibiting oscillations with a periodicity of one flux quantum. In different tunneling regimes we benchmark the oscillations’ contrast, and find their amplitude varies with the charge state of the quantum dots. These results establish the feasibility and limitations of parity readout of qubits with tunnel couplings tuned by flux. ...
Journal article (2023) - Lin Han, Michael Chan, Damaz De Jong, Christian Prosko, Ghada Badawy, Sasa Gazibegovic, Erik P.A.M. Bakkers, Leo P. Kouwenhoven, Filip K. Malinowski, Wolfgang Pfaff
Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device. ...