The three-step wet etching (TSWE) method has been proven to be a promising technique for fabricating silicon nanopores. Despite its potential, one of the bottlenecks of this method is the precise control of the silicon etching and etch-stop, which results in obtaining a well-defined nanopore size. Herein, we present a novel strategy leveraging electrochemical passivation to achieve accurate control over the silicon etching process. By dynamically controlling the oxide layer growth, rapid and reliable etch-stop was achieved in under 4 s, enabling the controllable fabrication of sub-10 nm silicon nanopores. The thickness of the oxide layer was precisely modulated by adjusting the passivation potential, achieving nanopore size shrinkage with a precision better than 2 nm, which can be further enhanced with more refined potential control. This scalable method significantly enhances the TSWE process, offering an efficient approach for producing small-size silicon nanopores with high precision. Importantly, the precise etching control facilitated by electrochemical passivation holds promise for the cost-effective production of high-density, air-insulated monolithic integrated circuits. (Figure presented.)

Nanopore sensors, owing to their distinctive structural properties, can be used to detect biomolecular translocation events. These sensors operate by monitoring variations in electric current amplitude and duration, thereby enabling the calibration and distinction of various biomolecules. As a result, nanopores emerge as a potentially powerful tool in the field of deoxyribonucleic acid (DNA) sequencing. However, the interplay between testing bandwidth and noise often leads to the loss of part of the critical translocation signals, presenting a substantial challenge for the precise measurement of biomolecules. In this context, innovative detection mechanisms have been developed, including optical detection, tunneling current detection, and nanopore field-effect transistor (FET) detection. These novel detection methods are based on but beyond traditional nanopore techniques and each of them has unique advantages. Notably, nanopore FET sensors stand out for their high signal-to-noise ratio (SNR) and high bandwidth measurement capabilities, overcoming the limitations typically associated with traditional solid-state nanopore (SSN) technologies and thus paving the way for new avenues to biomolecule detection. This review begins by elucidating the fundamental detection principles, development history, applications, and fabrication methods for traditional SSNs. It then introduces three novel detection mechanisms, with a particular emphasis on nanopore FET detection. Finally, a comprehensive analysis of the advantages and challenges associated with both SSNs and nanopore FET sensors is performed, and then insights into the future development trajectories for nanopore FET sensors in DNA sequencing are provided. This review has two main purposes: firstly, to provide researchers with a preliminary understanding of advancements in the nanopore field, and secondly, to offer a comprehensive analysis of the fabrication techniques, transverse current detection principles, challenges, and future development trends in the field of nanopore FET sensors. This comprehensive analysis aims to help give researchers in-depth insights into cutting-edge advancements in the field of nanopore FET sensors.