In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.@en

Nanostructures with steep side wall angles (swa) play a pivotal role in various technological applications. Accurate characterization of these nanostructures is crucial for optimizing their performance. In this study, we propose a far-field detection method based on coherent Fourier scatterometry (CFS) for accurate quantification of steep swa and heights in cliff-like nanostructures. Our approach introduces a parameter termed ‘visibility’, derived from the unique far-field signatures of cliff-like nanostructures. This parameter serves as a quantitative metric for the calibration of swa and heights. The heightened sensitivity of our method is demonstrated, particularly when the incident polarization is perpendicular to the invariant direction of the nanostructure for swa calibration, while both polarization states exhibit sensitivity to height calibration. Furthermore, a comprehensive sensitivity analysis reveals the stable nature of our method, showcasing that even with fluctuations of ±10 nm in the position of the nanostructure, the resulting swa remains stable within a range of ±0.5◦. The exponential variation of the visibility parameter with edge roundness is observed, with fluctuations in edge roundness within 10 nm resulting in swa variations within 1.7◦ for both polarization states. In experimental validations, our results demonstrate reasonable agreement between CFS-derived and AFM measurements. The AFM data for swa (77.99◦ ±1.37◦) and height (148.35 nm ±2.11 nm) are corroborated with CFS-derived value of swa (77.75◦ ±3.61◦, 78.36◦ ±3.89◦) and height (149.42 nm ±1.66 nm, 150.05 nm ±1.04 nm) obtained from calibration curves for TM and TE incident beams, respectively. Overall, our findings underscore CFS as a potential and reliable tool for nanostructure characterization, offering precise measurements that are pivotal for advancing nanotechnology.@en

It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To prevent these failures from happening, it is very important to develop inspection tools that can detect, characterize and locate these defects in a non-invasive way. Current inspection techniques such as Dark Field or Bright field microscopy are effectively able to visualize most such defects; however, there are some scenarios where the inspection becomes problematic or almost impossible, such as when the defects are too small or have low contrast or if the defects lie deep into the substrate. Thus, an alternative method is needed to face these challenges. In this paper, we demonstrate the application of coherent Fourier scatterometry (CFS) as a complementary tool in addition to the conventional techniques to overcome different and problematic scenarios of killer defects inspection on SiC samples. Scanning electron microscopy (SEM) has been used to assess the same defects to validate the findings of CFS. Great consistency has been demonstrated in the comparison between the results obtained with CFS and SEM.

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