Optical MEMS die-attach warpage analysis and mitigation via thermoelastic modeling and in-situ micro-Raman spectroscopy characterization

Journal Article (2025)
Author(s)

Wenyu Li (Fudan University)

Zhoudong Yang (Fudan University)

Xueliang Wang (Fudan University)

Yuhan Gao (Student TU Delft, Huazhong University of Science and Technology)

Jianguo Xie (Huazhong University of Science and Technology)

Fulong Zhu (Huazhong University of Science and Technology)

Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)

Jiajie Fan (Fudan University, TU Delft - Electronic Components, Technology and Materials)

Faculty
Electrical Engineering, Mathematics and Computer Science
DOI related publication
https://doi.org/10.1016/j.measurement.2025.118541
More Info
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Publication Year
2025
Language
English
Faculty
Electrical Engineering, Mathematics and Computer Science
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Journal title
Measurement: Journal of the International Measurement Confederation
Volume number
256
Article number
118541
Downloads counter
192
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Abstract

Optical micro-electromechanical systems (MEMS) demand exceptional precision, yet warpage during the die attach process on printed circuit boards can compromise performance. Here, a three-dimensional thermoelastic analytical model has been developed based on Fourier heat conduction and supported beam theory. This model facilitates the in-situ calibration of solder parameters via confocal micro-Raman spectroscopy, ensuring that the simulated dynamic evolution of warpage during soldering aligns closely with digital image correlation experiments. The results show consistence with Finite Element Method with error less than 1 % and time saving more than 60 %. Orthogonal experimental analysis further reveals that substrate thickness and thermal expansion coefficient variations are the primary factors affecting warpage, while chip area has a negligible role. Given the practical challenges in reducing substrate thickness, a stress-balancing strategy incorporating an additional transition layer is proposed, which is effectively validated with a high-resolution three-dimensional profilometer. This work provides valuable insights into the predictive modeling and warpage behavior characterization, directly supporting improved mitigation strategies in the die attach process.

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