An Oxide Electrothermal Filter in Standard CMOS

Conference paper (2016)

Authors

L. Pedala' Electronic Instrumentation -

U. Sonmez Electronic Instrumentation -

F. Sebastiano Electronic Instrumentation -

K.A.A. Makinwa Microelectronics

Krishnaswamy Nagaraj Texas Instruments

J. Park Texas Instruments

Research Group

Electronic Instrumentation () (TU Delft)

Electrothermal filter Temperature sensor Thermal diffusivity Phase domain sigma delta ADC Self-referenced

More Info

expand_more

To reference this document use:

http://resolver.tudelft.nl/uuid:070a86d4-8842-46eb-9ee2-4b463b3d755c

Published Date

2016

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.