An Oxide Electrothermal Filter in Standard CMOS

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An Oxide Electrothermal Filter in Standard CMOS

Conference Paper (2016)

Author(s)

Lorenzo Pedalà (TU Delft - Electronic Instrumentation)

Uğur Sonmez (TU Delft - Electronic Instrumentation)

Fabio Sebastiano (TU Delft - Electronic Instrumentation)

Kofi A.A. Makinwa (TU Delft - Microelectronics)

Krishnaswamy Nagaraj (Texas Instruments)

Joonsung Park (Texas Instruments)

Electrothermal filter Temperature sensor Thermal diffusivity Phase domain sigma delta ADC Self-referenced

DOI related publication

https://doi.org/10.1109/icsens.2016.7808512 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:070a86d4-8842-46eb-9ee2-4b463b3d755c

More Info

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Publication Year

2016

Language

English

Pages (from-to)

343-345

ISBN (electronic)

978-1-4799-8287-5

Event

IEEE Sensors 2016 (2016-10-30 - 2016-11-02), Caribe Royale All-Suite Hotel and Convention Center, Orlando, FL, United States

Downloads counter

184

Abstract

Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.