Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors
Romina Sattari (TU Delft - Electronic Components, Technology and Materials)
Henk van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.