Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Journal Article (2016)
Author(s)

JO Island (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

GA Steele (TU Delft - QN/Steele Lab, Kavli institute of nanoscience Delft)

Herre van der Zant (TU Delft - QN/van der Zant Lab, Kavli institute of nanoscience Delft)

Andres Castellanos-Gomez (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia))

Research Group
QN/van der Zant Lab
Copyright
© 2016 J.O. Island, G.A. Steele, H.S.J. van der Zant, A. Castellanos Gomez
DOI related publication
https://doi.org/10.1088/2053-1583/3/3/031002
More Info
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Publication Year
2016
Language
English
Copyright
© 2016 J.O. Island, G.A. Steele, H.S.J. van der Zant, A. Castellanos Gomez
Research Group
QN/van der Zant Lab
Issue number
3
Volume number
3
Pages (from-to)
1-7
Reuse Rights

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Abstract

Wereport on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)-molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe.Weanticipate that this device architecture could be easily extended to other 2D materials.

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