Thickness dependent interlayer transport in vertical MoS<sub>2</sub> Josephson junctions

Journal article (2016)

Authors

J.O. Island QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
G.A. Steele Kavli institute of nanoscience Delft, QN/Steele Lab - AS
H.S.J. van der Zant QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
A. Castellanos Gomez Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia)
Research Group
QN/van der Zant Lab (AS) (TU Delft)
Copyright: © 2016 J.O. Island, G.A. Steele, H.S.J. van der Zant, A. Castellanos Gomez
DOI
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https://doi.org/10.1088/2053-1583/3/3/031002
Josephson junction Andreev reflection Thickness dependence Molybdenum disulfide MoS Tunnel barrier Vertical junction
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Published Date

01-07-2016

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/van der Zant Lab

Abstract

Wereport on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)-molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe.Weanticipate that this device architecture could be easily extended to other 2D materials.

Files

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