High-fidelity single-spin shuttling in silicon

Abstract

The computational power and fault tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit–qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. In a first set of experiments, we form static quantum dots and study how spin coherence decays during bucket-brigade shuttling, where we repeatedly move a single electron between up to five dots. Next, for conveyor-mode shuttling, we create a travelling-wave potential, formed with either one or two sets of sine waves, to transport an electron in a moving quantum dot. This method shows a spin coherence an order of magnitude better than the bucket-brigade shuttling. It allows us to displace an electron over an effective distance of 10 μm in under 200 ns while preserving the spin state with a fidelity of 99.5% on average. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.