X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Journal Article (2011)
Author(s)

N Hrauda (External organisation)

Jing Zhang (TU Delft - Electronic Components, Technology and Materials)

E Wintersberger (External organisation)

T Etzelstorfer (External organisation)

B Mandl (External organisation)

J Stangl (External organisation)

D Carbone (External organisation)

V Holy (External organisation)

V Jovanovic (TU Delft - Electronic Components, Technology and Materials)

C Biasotto (TU Delft - Electronic Components, Technology and Materials)

LK Nanver (TU Delft - Electronic Components, Technology and Materials)

J Moers (External organisation)

D Grutzmacher (External organisation)

G Baur (External organisation)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1021/nl2013289
More Info
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Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
Issue number
7
Volume number
11
Pages (from-to)
2875-2880

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