Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

Conference paper (2023)

Authors

Y. Zhang Electronic Components, Technology and Materials - EEMCS
J. Mo Electronic Components, Technology and Materials - EEMCS
S. Vollebregt Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB
Tobias Erlbacher Fraunhofer Institute for Integrated Systems and Devices Technology IISB
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Reliability 4H-SiC Time-dependent dielectric breakdown
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.