On the Use of the Meshless Material Point Method for Microelectronic Devices
S.D.M. de Jong (TU Delft - Electronic Components, Technology and Materials)
W.D. van Driel (TU Delft - Electronic Components, Technology and Materials)
Kouchi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
In this work, the Material Point Method (MPM) is reviewed for application in the microelectronics industry. Microelectronic processes often involve large deformations, evolving interfaces, multiphysics coupling, and complex geometries that challenge conventional mesh-based methods such as the finite element method (FEM). Meshless methods provide an alternative solution that avoids these issues. A comparison is made between Smoothed Particle Hydrodynamics (SPH), Element Free Galerkin (EFG), peridynamics, Radial Basis Function–Finite Difference (RBF-FD), and MPM, evaluated with respect to convergence, consistency and stability, boundary enforcement, adaptivity, coupling, and industrial applicability. Based on this assessment, MPM and its main variants (BSMPM, GIMP, CPDI, and TLMPM) are examined in depth. The method’s ability to address large deformations, moving interfaces, contact, history-dependent material behavior, and multiphysics interactions is examined. The underfill process is used as a representative use case to illustrate challenges such as free surface flow, void formation, thermomechanical coupling, and residual stress. Overall, MPM shows strong potential, although further benchmarking and validation are required for widespread industrial adoption.
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