A 40.68-MHz, 200-ns-Settling Active Rectifier for mm-Sized Implants
Ronald Wijermars (TU Delft - Bio-Electronics)
Yi Han Ou-yang (Student TU Delft)
S. Du (TU Delft - Electronic Instrumentation)
D.G. Muratore (TU Delft - Bio-Electronics)
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Abstract
This letter describes a fast-settling active rectifier for a 40.68 MHz wireless power transfer receiver for implantable applications. Fast-settling and low power are achieved through a novel direct voltage-domain compensation technique. The rectifier maintains high efficiency during load and link variations required for downlink communication. The system was fabricated in 40nm CMOS and achieves a voltage conversion ratio of 93.9% and a simulated power conversion efficiency of 90.1% in a 0.19 mm2 area, resulting in a 118 mW/mm2 power density while integrating the resonance and filter capacitors. The worst-case settling of the ON-and OFF-delay compensation in the active rectifier is 200 ns, which is the fastest reported to date.
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