A 3V 15b 157W Cryo-CMOS DAC for Multiplexed Spin-Qubit Biasing
Luc Enthoven (QCD/Sebastiano Lab)
Job Van Staveren (QCD/Sebastiano Lab)
Jiang Gong
Masoud Babaie (TU Delft - Electronics)
Fabio Sebastiano (TU Delft - Quantum Circuit Architectures and Technology)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
This paper presents a 15b cryo-CMOS DAC for multiplexed spin-qubit biasing implemented in a 22-nm FinFET process. The integrating-DAC architecture and the robust digitally-assisted high-voltage output stage enable a low power dissipation (157W) and small area (0.08mm2) independent of the number of biased qubits, and a 3V output range well beyond the nominal supply. This represents the first scalable solution for cryo-CMOS qubit biasing, which achieves a 1.8× better voltage resolution with a lower DNL over a 3× larger output range than the current state-of-the-art.