Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

Conference Paper (2012)
Authors

Lis Nanver (TU Delft - Electronic Components, Technology and Materials)

Amir Sammak (TU Delft - Electronic Components, Technology and Materials)

V. Mohammadi (TU Delft - Electronic Components, Technology and Materials)

KRC Mok (External organisation)

L. Qi (TU Delft - Electronic Components, Technology and Materials)

A. Sakic (TU Delft - Electronic Components, Technology and Materials)

N Golshani (TU Delft - Electronic Components, Technology and Materials)

J Derakhshandeh (External organisation)

T.L.M. Scholtes (TU Delft - Electronic Components, Technology and Materials)

WB De Boer (Old - EWI Sect. ECTM)

Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1149/04901.0025ecst
More Info
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Publication Year
2012
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
25-33
DOI:
https://doi.org/10.1149/04901.0025ecst

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