A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

Conference Paper (2018)
Author(s)

Z. Hu (TU Delft - Electronics)

G. Vlachogiannakis (TU Delft - Electronics)

MAP Pertijs (TU Delft - Electronic Instrumentation)

LCN de Vreede (TU Delft - Electronics)

Marco Spirito (TU Delft - Electronics)

Research Group
Electronic Instrumentation
Copyright
© 2018 Z. Hu, G. Vlachogiannakis, M.A.P. Pertijs, L.C.N. de Vreede, M. Spirito
DOI related publication
https://doi.org/10.1109/MWSYM.2018.8439438
More Info
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Publication Year
2018
Language
English
Copyright
© 2018 Z. Hu, G. Vlachogiannakis, M.A.P. Pertijs, L.C.N. de Vreede, M. Spirito
Related content
Research Group
Electronic Instrumentation
Volume number
2018-June
Pages (from-to)
1160-1163
ISBN (print)
978-1-5386-5067-7
Reuse Rights

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Abstract

A 0.14-μ m CMOS 2-D permittivity imaging matrix prototype operating at microwave frequencies is presented. It comprises 25 permittivity-sensing pixels, each consisting of a sensing patch connected to a dedicated RF bridge. A trans-conduct-ance stage converts the imbalance voltage to a current signal, subsequently down-converted to an intermediate frequency and sampled. The implemented sensor matrix shows precise permittivity measurements over a range of 0.1-10 GHz, and successfully demonstrates permittivity contrast with a resolution of 0.1 - 2.3 from 0.1 to 10 GHz when the matrix is interfaced with various dielectrics. Owing to the matrix implementation a sub-mm, permittivity discontinuity is easily resolved by the presented sensor device.

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