A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

Conference paper (2018)

Authors

Z. Hu Electronics - EEMCS
G. Vlachogiannakis Electronics - EEMCS
M.A.P. Pertijs Electronic Instrumentation - EEMCS
L.C.N. de Vreede Electronics - EEMCS
M. Spirito Electronics - EEMCS
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2018 Z. Hu, G. Vlachogiannakis, M.A.P. Pertijs, L.C.N. de Vreede, M. Spirito
DOI: https://doi.org/10.1109/MWSYM.2018.8439438
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Published Date

2018

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

A 0.14-μ m CMOS 2-D permittivity imaging matrix prototype operating at microwave frequencies is presented. It comprises 25 permittivity-sensing pixels, each consisting of a sensing patch connected to a dedicated RF bridge. A trans-conduct-ance stage converts the imbalance voltage to a current signal, subsequently down-converted to an intermediate frequency and sampled. The implemented sensor matrix shows precise permittivity measurements over a range of 0.1-10 GHz, and successfully demonstrates permittivity contrast with a resolution of 0.1 - 2.3 from 0.1 to 10 GHz when the matrix is interfaced with various dielectrics. Owing to the matrix implementation a sub-mm, permittivity discontinuity is easily resolved by the presented sensor device.