Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition
M.A. Wank (TU Delft - Photovoltaic Materials and Devices)
A Illiberi (External organisation)
F. Tichelaar (QN/High Resolution Electron Microscopy)
R A C M M van van Swaaij (TU Delft - Photovoltaic Materials and Devices)
MCM van de Sanden (External organisation)
Miro Zeman (TU Delft - Photovoltaic Materials and Devices)
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Abstract
Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.
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