Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

Journal article (2010)

Authors

M.A. Wank Photovoltaic Materials and Devices - EEMCS
Andrea Illiberi External organisation
F.D. Tichelaar QN/High Resolution Electron Microscopy
R.A.C.M.M. van Swaaij Photovoltaic Materials and Devices - EEMCS
MCM van de Sanden External organisation
M. Zeman Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
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Published Date

2010

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness layer thickness is measured than with AFM. Additionally we observe what appears to be a strong roughening phase in the first 30-50 nm of film growth for all conditions. A mechanism that involves the formations of a hydrogenrich overlayer and etching of higher hydrides in this overlayer is suggested.