A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
Jiarui Mo (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Jinglin Li (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Yaqian Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Joost Romijn (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Tobias Erlbacher (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Sten Vollebregt (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.