JR
Authored
17 records found
This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor
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This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operat
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The operating principle of Pirani pressure sensors is based on the pressure dependence of a suspended strip's electrical conductivity, caused by the thermal conductance of the surrounding gas which changes the Joule heating of the strip. To realize such sensors, not only material
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In this work, a novel microfabrication-compatible production process is demonstrated and used to fabricate UV photoresistors made from ZnO nanoparticles. It comprises a simple room-temperature production method for synthesizing and direct-writing nanoparticles. The method can be
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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits,
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The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellite
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In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position senso
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In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position se
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The continuous trend to integrate more multi-functions in a package often involves, Heterogeneous Integration of multi-functional blocks in some kind of 3D stacking. The conventional flip chip for die-on-substrate technology applies solder for integration. However, solder joint i
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Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200
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The growing diversity in the used materials in semiconductor packaging provides challenges for achieving good interconnection. Particularly the very soft substrates, such as paper and polymers, and very hard, such as silicon carbide, offer unique challenges to wire-bonding or for
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Worlds first graphene-based Pirani pressure sensor is presented. Due to the decreased area and low thickness, the graphene-based Pirani pressure sensor allows for low power applications down to 0.9 mW. Using an innovative, transfer-free process, suspended graphene beams are reali
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In this paper we present, for the first time, the successful monolithic wafer-scale integration of CVD graphene with CMOS logic for highly miniaturized smart sensing structures with on-chip readout electronics. The use of a patterned CMOS compatible catalyst for pre-defined regio
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Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology
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Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology
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Contributed
3 records found
This thesis describes the process of creating the Graphical User Interface (GUI) of a reconfigurable test measurement setup for Internet of Things sensors, which is part of the Bachelor Graduation Project in the Electrical Engineering programme of the Delft University of Technolo
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To extend Moore’s law, silicon carbide devices attend the researcher’s attention due to their irreplaceable advantages such as high critical breakdown electrical field, wide bandgap and excellent thermal conductivity without sacrificing too much charge carrier mobility. However,
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Localization of a light source in the space requires capturing its light intensity and angle information. However, conventional CMOS image sensors can only capture light intensity and wavelength. These sensors need to be augmented with an optical extension such as an aperture or
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