Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications
Yunfan Niu (Student TU Delft)
J. Mo (TU Delft - Electronic Components, Technology and Materials)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Mathias Rommel (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Chiara Rossi (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Joost Romijn (TU Delft - Microelectronics)
Guo Qi Z Zhang (TU Delft - Electronic Components, Technology and Materials)
Sten Vollebregt (TU Delft - Electronic Components, Technology and Materials)
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Abstract
This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.