Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

Conference paper (2023)

Authors

Yunfan Niu Student
J. Mo Electronic Components, Technology and Materials - EEMCS
Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB
Mathias Rommel Fraunhofer Institute for Integrated Systems and Devices Technology IISB
Chiara Rossi Fraunhofer Institute for Integrated Systems and Devices Technology IISB
J. Romijn Microelectronics
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
S. Vollebregt Electronic Components, Technology and Materials - EEMCS
Faculty
Electrical Engineering, Mathematics and Computer Science
Copyright: © 2023 Yunfan Niu, J. Mo, Alexander May, Mathias Rommel, Chiara Rossi, J. Romijn, Kouchi Zhang, S. Vollebregt
DOI
help_outline
https://doi.org/10.1109/SENSORS56945.2023.10325061
Silicon carbide Analog-to-digital converter Harsh-environment
More Info
expand_more

Published Date

2023

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Abstract

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.