Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
J. Romijn (TU Delft - Microelectronics)
Sten Vollebregt (TU Delft - Electronic Components, Technology and Materials)
L.M. Middelburg (TU Delft - Electronic Components, Technology and Materials)
B. el Mansouri (TU Delft - Electronic Components, Technology and Materials)
H. van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Tobias Erlbacher (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Johan Leijtens (Lens R&D BV)
G. Zhang (TU Delft - Electronic Components, Technology and Materials)
Pasqualina Maria Sarro (TU Delft - Electronic Components, Technology and Materials)
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Abstract
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.