Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology
J. Romijn (TU Delft - Electronic Components, Technology and Materials)
S. Vollebregt (TU Delft - Electronic Components, Technology and Materials)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Tobias Erlbacher (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
H. van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Johan Leijtens (Lens R&D BV)
G. Zhang (TU Delft - Electronic Components, Technology and Materials)
P.M. Sarro (TU Delft - Electronic Components, Technology and Materials)
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Abstract
In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of the photodetectors and CMOS readout circuitry on-chip is vital to compete with the performance of silicon state-of-the-art and for the concept to be adopted by industry, which is where previous implementations of visible blind sun sensors are lacking.