Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

Conference paper (2022)

Authors

J. Romijn Electronic Components, Technology and Materials - EEMCS
S. Vollebregt Electronic Components, Technology and Materials - EEMCS
Alexander May Fraunhofer Institute for Integrated Systems and Devices Technology IISB
Tobias Erlbacher Fraunhofer Institute for Integrated Systems and Devices Technology IISB
H.W. van Zeijl Electronic Components, Technology and Materials - EEMCS
J.A.P. Leijtens Lens R&D BV
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2022 J. Romijn, S. Vollebregt, Alexander May, Tobias Erlbacher, H.W. van Zeijl, J.A.P. Leijtens, Kouchi Zhang, Pasqualina M Sarro
DOI
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https://doi.org/10.1109/MEMS51670.2022.9699533
Silicon carbide Sun position sensors Wide bandgap semiconductors 4H-SiC UV photodetectors
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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of the photodetectors and CMOS readout circuitry on-chip is vital to compete with the performance of silicon state-of-the-art and for the concept to be adopted by industry, which is where previous implementations of visible blind sun sensors are lacking.