Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology
Joost Romijn (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Sten Vollebregt (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Luke M. Middelburg (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Brahim el Mansouri (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Henk W. van Zeijl (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Tobias Erlbacher (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Pasqualina M. Sarro (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.